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STM8S105C4 bảng dữ liệu(PDF) 72 Page - STMicroelectronics

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Electrical characteristics
STM8S105x4/6
72/121
DocID14771 Rev 15
10.3.5
Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
Table 35. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
Halt mode (or reset)
VIT-max(2)
2. Refer to Section 10.3: Operating conditions for the value of VIT-max.
V
Table 36. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min(1)
1. Data based on characterization results, not tested in production.
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU≤ 16 MHz
2.95
-
5.5
V
tprog
Standard programming time (including
erase) for byte/word/block
(1 byte/4 byte/128 byte)
--
6
6.6
ms
Fast programming time for 1 block
(128 byte)
--
3
3.33
terase
Erase time for 1 block (128 byte)
-
-
3
3.33
NRW
Erase/write cycles
(program memory)(2)
2. The physical granularity of the memory is 4 byte, so cycling is performed on 4 byte even when a
write/erase operation addresses a single byte.
TA = +85 °C
10k
-
-
cycle
Erase/write cycles (data memory)(2)
TA = +125 °C
300k
1M
-
tRET
Data retention (program and data
memory) after 10k erase/write cycles
at TA= +55 °C
TRET = 55 °C
20
-
-
year
Data retention (data memory) after
300k erase/write cycles at
TA= +125°C
TRET = 85 °C
1
-
-
IDD
Supply current (Flash programming or
erasing for 1 to 128 byte)
--
2
-
mA



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