STM32F407IE datasheet(77/154 Pages) STMICROELECTRONICS

77 / 154 page

STM32F405xx, STM32F407xx

Electrical characteristics

Doc ID 022152 Rev 1

77/154

5.3.9

Internal clock source characteristics

The parameters given in Table 29 and Table 30 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 10.

High-speed internal (HSI) RC oscillator

Low-speed internal (LSI) RC oscillator

Table 29.

HSI oscillator characteristics (1)

VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the

ST website www.st.com.

Factory-

calibrated

TA = –40 to 105 °C

–8

4.5

TA = –10 to 85 °C

–4

TA = 25 °C

–1

tsu(HSI)

(3)

Guaranteed by design, not tested in production.

HSI oscillator

startup time

-2.2

µs

IDD(HSI)

HSI oscillator

power consumption

-60

µA

Table 30.

LSI oscillator characteristics (1)

VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Unit

fLSI

(2)

Based on characterization, not tested in production.

Frequency

kHz

tsu(LSI)

(3)

Guaranteed by design, not tested in production.

LSI oscillator startup time

µs

IDD(LSI)

(3)

LSI oscillator power consumption

0.4

0.6

µA

STM32F407IE bảng dữ liệu(PDF) 77 Page - STMicroelectronics

STM32F407IE bảng dữ liệu(HTML) 77 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

bảng dữ liệu tải về

Link URL