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KM416RD8AS-RBM80 bảng dữ liệu(PDF) 34 Page - Samsung semiconductor

tên linh kiện KM416RD8AS-RBM80
Giải thích chi tiết về linh kiện  128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
PDF  64 Pages
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nhà sản xuất  SAMSUNG [Samsung semiconductor]
Trang chủ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416RD8AS-RBM80 bảng dữ liệu(HTML) 34 Page - Samsung semiconductor

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Page 31
KM416RD8AS
Direct RDRAM™
Rev. 0.9 July 1999
Target
04916
TFRM
TFRM
read-write, 4 bits
tFRM-C core parameter. Determines ROW-COL packet framing interval.
04a16
TCDLY1
TCDLY1
read-write, 3 bits
tCDLY1-C core parameter. Programmable delay for read data.
04b16
SKIP
AS
read, 1 bit
Auto Skip.
MSE
read-write, 1 bit
Manual Skip Enable.
MS
read-write, 1 bit
Manual Skip.
04c16
TCYCLE
TCYCLE
read-write, 14 bits
tCYCLE datasheet parameter. Specifies cycle time in 64ps units.
04d16
TEST77
TEST77
read-write, 16 bits
Test register. Write with zero after SIO reset.
04e16
TEST78
TEST78
read-write, 16 bits
Test register. Do not read or write after SIO reset.
04f16
TEST79
TEST79
read-write, 16 bits
Test register. Do not read or write after SIO reset.
08016 - 0ff16 reserved
reserved
vendor-specific
Vendor-specific test registers. Do not read or write after SIO reset.
Table 16: Control Register Summary
SA11..SA0
Register
Field
read-write/ read-only
Description



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