công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

KM416RD8AS-RBM80 bảng dữ liệu(PDF) 24 Page - Samsung semiconductor

tên linh kiện KM416RD8AS-RBM80
Giải thích chi tiết về linh kiện  128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
PDF  64 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  SAMSUNG [Samsung semiconductor]
Trang chủ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416RD8AS-RBM80 bảng dữ liệu(HTML) 24 Page - Samsung semiconductor

Back Button KM416RD8AS-RBM80 Datasheet HTML 20Page - Samsung semiconductor KM416RD8AS-RBM80 Datasheet HTML 21Page - Samsung semiconductor KM416RD8AS-RBM80 Datasheet HTML 22Page - Samsung semiconductor KM416RD8AS-RBM80 Datasheet HTML 23Page - Samsung semiconductor KM416RD8AS-RBM80 Datasheet HTML 24Page - Samsung semiconductor KM416RD8AS-RBM80 Datasheet HTML 25Page - Samsung semiconductor KM416RD8AS-RBM80 Datasheet HTML 26Page - Samsung semiconductor KM416RD8AS-RBM80 Datasheet HTML 27Page - Samsung semiconductor KM416RD8AS-RBM80 Datasheet HTML 28Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 24 / 64 page
background image
Page 21
KM416RD8AS
Direct RDRAM™
Rev. 0.9 July 1999
Target
Write Transaction - Example
Figure 16 shows an example of a write transaction. It begins
by activating a bank with an ACT a0 command in an ROWA
packet. A time tRCD-tRTR later a WR a1 command is issued
in a COLC packet (note that the tRCD interval is measured to
the end of the COLC packet with the first retire command).
Note that the ACT command includes the device, bank, and
row address (abbreviated as a0) while the WR command
includes device, bank, and column address (abbreviated as
a1). A time tCWD after the WR command the write data
dualoct D(a1) is issued. Note that the packets on the ROW
and COL pins use the end of the packet as a timing reference
point, while the packets on the DQA/DQB pins use the
beginning of the packet as a timing reference point.
A time tCC after the first COLC packet on the COL pins a
second COLC packet is issued. It contains a WR a2
command. The a2 address has the same device and bank
address as the a1 address (and a0 address), but a different
column address. A time tCWD after the second WR
command a second write data dualoct D(a2) is issued.
A time tRTR after each WR command an optional COLM
packet MSK (a1) is issued, and at the same time a COLC
packet is issued causing the write buffer to automatically
retire. See Figure 17 for more detail on the write/retire
mechanism. If a COLM packet is not used, all data bytes are
unconditionally written. If the COLC packet which causes
the write buffer to retire is delayed, then the COLM packet
(if used) must also be delayed.
Next, a PRER a3 command is issued in an ROWR packet on
the ROW pins. This causes the bank to precharge so that a
different row may be activated in a subsequent transaction or
so that an adjacent bank may be activated. The a3 address
includes the same device and bank address as the a0, a1, and
a2 addresses. The PRER command must occur a time tRAS
or more after the original ACT command (the activation
operation in any DRAM is destructive, and the contents of
the selected row must be restored from the two associated
sense amps of the bank during the tRAS interval).
A PRER a3 command is issued in an ROWR packet on the
ROW pins. The PRER command must occur a time tRTP or
more after the last COLC which causes an automatic retire.
Finally, an ACT b0 command is issued in an ROWR packet
on the ROW pins. The second ACT command must occur a
time tRC or more after the first ACT command and a time tRP
or more after the PRER command. This ensures that the
bank and its associated sense amps are precharged. This
example assumes that the second transaction has the same
device and bank address as the first transaction, but a
different row address. Transaction b may not be started until
transaction a has finished. However, transactions to other
banks or other devices may be issued during transaction a.
Figure 16: Write Transaction Example
CTM/CFM
DQA7..0
DQB7..0
COL4
..COL0
ROW2
..ROW0
T0
T4
T8
T12
T1
T5
T9
T13
T2
T6
T10
T14
T3
T7
T11
T15 T16
T20
T24
T28
T17
T21
T25
T29
T18
T22
T26
T30
T19
T23
T27
T31 T32
T36
T40
T44
T33
T37
T41
T45
T34
T38
T42
T46
T35
T39
T43
T47
MSK (a2)
retire (a2)
MSK (a1)
retire (a1)
WR a1
PRER a3
WR a2
D (a2)
tRCD
D (a1)
ACT b0
tRC
tRP
ACT a0
tCWD
Transaction a: WR
a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
a2 = {Da,Ba,Ca2}
a3 = {Da,Ba}
tCC
tCWD
tRTR
tRAS
tRTR
tRTP
Transaction b: xx
b0 = {Da,Ba,Rb}



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com