STM32W108HB datasheet(167/179 Pages) STMICROELECTRONICS

167 / 179 page

STM32W108CB, STM32W108HB

Electrical characteristics

Doc ID 16252 Rev 2

167/179

ARM® Cortex-M3, RAM, and flash

memory sleep current

25 °C, 1.8 V memory and

1.25 V core

ARM® Cortex-M3 clocked at

12 MHz from the crystal

oscillator

Radio and all peripherals off

4.0

ARM® Cortex-M3, RAM, and flash

memory sleep current

25 °C, 1.8 V memory and

1.25 V core

ARM® Cortex-M3 clocked at

6 MHz from the high frequency

RC oscillator

Radio and all peripherals off

2.0

Serial controller current

For each controller at

maximum data rate

0.2

General purpose timer current

For each timer at maximum

clock rate

0.1

General purpose ADC current

At maximum sample rate, DMA

enabled

1.1

Rx current

Radio receiver, MAC, and

baseband

ARM® Cortex-M3 sleeping

20.0

Total RX current ( = IRadio receiver,

MAC and baseband, CPU + IRAM, and

Flash memory )

VDD_PADS = 3.0 V, 25 °C,

ARM® Cortex-M3 running at

12 MHz

27.0

VDD_PADS = 3.0 V, 25 °C,

ARM® Cortex-M3 running at

24 MHz

28.0

Boost mode total RX current ( =

IRadio receiver, MAC and baseband,

CPU+ IRAM, and Flash memory )

VDD_PADS = 3.0 V, 25 °C,

ARM® Cortex-M3 running at

12 MHz

28.0

VDD_PADS = 3.0 V, 2 5°C,

ARM® Cortex-M3 running at

24 MHz

29.0

Tx current

Radio transmitter, MAC, and

baseband

25 °C and 1.8 V core; max.

power out (+3 dBm typical)

ARM® Cortex-M3 sleeping

26.0

Table 40.

DC electrical characteristics (continued)

Parameter

Conditions

Min.

Typ.

Max.

Unit

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