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STM32W108HB bảng dữ liệu(PDF) 157 Page - STMicroelectronics |
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STM32W108HB bảng dữ liệu(HTML) 157 Page - STMicroelectronics |
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157 / 179 page ![]() STM32W108CB, STM32W108HB Electrical characteristics Doc ID 16252 Rev 2 157/179 12.2 Absolute maximum ratings Stresses above the absolute maximum ratings listed in Table 23: Voltage characteristics, Table 24: Current characteristics, and Table 25: Thermal characteristics may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Table 23. Voltage characteristics Ratings Min. Max. Unit Regulator input voltage (VDD_PADS) -0.3 +3.6 V Analog, Memory and Core voltage (VDD_24MHZ, VDD_VCO, VDD_RF, VDD_IF, VDD_PADSA, VDD_MEM, VDD_PRE, VDD_SYNTH, VDD_CORE) -0.3 +2.0 V Voltage on RF_P,N; RF_TX_ALT_P,N -0.3 +3.6 V RF Input Power (for max level for correct packet reception see Table 43: Receive characteristics) RX signal into a lossless balun +15 dBm Voltage on any GPIO (PA[7:0], PB[7:0], PC[7:0]), SWCLK, NRST, VREG_OUT -0.3 VDD_PADS +0.3 V Voltage on BIAS_R, OSCA, OSCB -0.3 VDD_PADSA +0.3 V Table 24. Current characteristics Symbol Ratings Max. Unit IVDD Total current into VDD/VDDA power lines (source) 150 mA IVSS Total current out of VSS ground lines (sink) 150 IIO Output current sunk by any I/O and control pin 25 Output current source by any I/Os and control pin − 25 IINJ(PIN) Injected current on NRST pin ± 5 Injected current on HSE OSC_IN and LSE OSC_IN pins ± 5 Injected current on any other pin ± 5 ΣI INJ(PIN) Total injected current (sum of all I/O and control pins) ± 25 Table 25. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range –40 to +140 °C TJ Maximum junction temperature 150 °C |
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