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JS48F4400P0P3C0 bảng dữ liệu(PDF) 135 Page - Numonyx B.V |
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JS48F4400P0P3C0 bảng dữ liệu(HTML) 135 Page - Numonyx B.V |
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135 / 139 page ![]() April 2008 Datasheet 309823-10 135 Numonyx™ StrataFlash® Cellular Memory (M18) Notes: 1. Diagram shows WAIT as active low (RCR.10=0) and asserted with Data (RCR.8=0). 2. For no-wrap bursts, end-of-wordline WAIT states could occur (not shown in timing diagram) 3. Without latching A[MAX:16] in the Sync Read Cycle, the previously latched A[MAX:16] applies. A.3.4 Synchronous Write Cycles For synchronous writes, only the address latching cycle(s) are synchronous. Synchronous address latching is depicted in the timing diagrams for synchronous read cycles: • Figure 65, “AADM Sync Burst Read Cycle (ADV# De-asserted between Address Cycles)” on page 134 • Figure 66, “AADM Sync Burst Read Cycle (ADV# Not De-asserted between Address Cycles)” on page 134 • Figure 67, “AADM Sync Burst Read Cycle (Latching A[15:0] only)” on page 135 The actual write operation (rising WE# edge) is asynchronous and is independent of CLK. Asynchronous writes are depicted in the timing diagrams for asynchronous write cycles: • Figure 63, “AADM Asynchronous Write Cycle (Latching A[MAX:0])” on page 132 • Figure 64, “AADM Asynchronous Write Cycle (Latching A[15:0] only)” on page 132 A.3.5 System Boot Systems that use the AADM mode will boot from the bottom 128k Bytes of device memory because A[MAX:16] are expected to be grounded in-system. The 128k Byte boot region is sufficient to perform required boot activities before setting RCR[4] to enable AADM mode. Figure 67: AADM Sync Burst Read Cycle (Latching A[15:0] only) A[15:0] DQ[15:0] DQ[15:0] A R312 R307 R314 R303 R317 R313 R311 R302 R305 R304 R315 R306 R301 A/DQ[15:0] CLK ADV# CE# OE# WE# WAIT |
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