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Giải thích chi tiết về linh kiện  StrataFlash짰 Cellular Memory
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Numonyx™ StrataFlash® Cellular Memory (M18)
Datasheet
April 2008
46
309823-10
6.3
DC Voltage Specifications
IPPE
VPP Erase
0.05
0.1
mA
VPP = VPPL = VPPH, erase
in progress
3
IPPBC
VPP Blank Check
0.05
0.1
mA
VPP = VPPL = VPPH, blank
check in progress
3
Notes:
1.
All currents are RMS unless noted. Typical values at typical VCC, TC = +25 °C.
2.
ICCS is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
3.
Sampled, not 100% tested.
4.
VCC read + program current is the sum of VCC read and VCC program currents.
5.
VCC read + erase current is the sum of VCC read and VCC erase currents.
6.
ICCES is specified with the device deselected. If device is read while in erase suspend, current is ICCES plus ICCR
7.
ICCW, ICCE measured over typical or max times specified in Section 7.4, “Program and Erase
Characteristics” on page 68
8.
IDPD is the current measured 40 µs after entering DPD.
Table 14: DC Voltage Specifications
Symbol
Parameter
VCCQ
1.7 V – 2.0 V
Unit
Test Condition
Notes
Min
Max
VIL
Input Low Voltage
0
0.4
V
—1
VIH
Input High Voltage
VCCQ –0.4
VCCQ
——
VOL
Output Low Voltage
—
0.1
VCC = VCCMIN
VCCQ = VCCQMIN
IOL = 100 µA
—
VOH
Output High Voltage
VCCQ –0.1
—
VCC = VCCMIN
VCCQ = VCCQMIN
IOH = –100 µA
—
VPPLK
VPP Lock-Out Voltage
—
0.4
—
2
VLKO
VCC Lock Voltage
1.0
—
—
—
VLKOQ
VCCQ Lock Voltage
0.9
—
—
—
Notes:
1.
During signal transitions, voltage can undershoot to –1.0 V and overshoot to maximum VCCQ+1.0 V for durations of < 2
ns.
2.
VPP ≤ VPPLK inhibits erase and program operations. Do not use VPPL and VPPH outside their valid ranges.
Table 13: DC Current Specifications (Sheet 3 of 3)
Sym
Parameter
Litho
(nm)
Density
(Mbit)
1.7 V – 2.0 V
Unit
Test Conditions
Notes
Typ
Max



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