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MC68HC908GR4MP bảng dữ liệu(PDF) 268 Page - Freescale Semiconductor, Inc |
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MC68HC908GR4MP bảng dữ liệu(HTML) 268 Page - Freescale Semiconductor, Inc |
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268 / 286 page ![]() Electrical Specifications MC68HC908GR8 • MC68HC908GR4 Data Sheet, Rev. 7 268 Freescale Semiconductor 23.15 Timer Interface Module Characteristics 23.16 Memory Characteristics Characteristic Symbol Min Max Unit Input capture pulse width tTIH, tTIL 2— tcyc Timer input capture period tTLTL See Note(1) 1. The minimum period is the number of cycles it takes to execute the interrupt service routine plus 1 tcyc. — tcyc Characteristic Symbol Min Typ Max Unit RAM data retention voltage VRDR 1.3 — — V FLASH program bus clock frequency — 1 — — MHz FLASH read bus clock frequency fRead (1) 1. fRead is defined as the frequency range for which the FLASH memory can be read. 32k — 8.4M Hz FLASH page erase time Limited endurance (<1 K cycles) Maximum endurance (> 1 K cycles) tErase 0.9 3.6 1 4 1.1 5.5 ms FLASH mass erase time tMErase 4— — ms FLASH PGM/ERASE to HVEN set up time tnvs 10 — — μs FLASH high-voltage hold time tnvh 5— — μs FLASH high-voltage hold time (mass erase) tnvhl 100 — — μs FLASH program hold time tpgs 5— — μs FLASH program time tPROG 30 — 40 μs FLASH return to read time trcv (2) 2. trcv is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing HVEN to 0. 1— — μs FLASH cumulative program HV period tHV (3) 3. tHV is defined as the cumulative high voltage programming time to the same row before next erase. tHV must satisfy this condition: tnvs + tnvh + tpgs + (tPROG × 64) ≤ tHV max. —— 4 ms FLASH endurance(4) 4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines typical Endurance, please refer to Engineering Bulletin EB619. — 10k 100k — Cycles FLASH data retention time(5) 5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please refer to Engineering Bulletin EB618. — 15 100 — Years |
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