NX6008NBKS

60 V, dual N-channel Trench MOSFET

19 August 2021

Product data sheet

1. General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

• Low threshold voltage

• Very fast switching

• Trench MOSFET technology

• ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

• Relay driver

• High-speed line driver

• Low-side load switch

• Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

-

-

60

V

VGS

gate-source voltage

Tj = 25 °C

-8

-

8

V

ID

drain current

VGS = 4.5 V; Tamb = 25 °C

[1]

-

-

220

mA

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 4.5 V; ID = 300 mA; Tj = 25 °C

-

2

2.7

Ω

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.