Nexperia

NX6008NBKS

60 V, dual N-channel Trench MOSFET

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

60

-

-

V

VGSth

gate-source threshold

voltage

ID = 250 µA; VDS = VGS; Tj = 25 °C

0.4

0.6

0.9

V

IDSS

drain leakage current

VDS = 60 V; VGS = 0 V; Tj = 25 °C

-

-

1

µA

VGS = 8 V; VDS = 0 V; Tj = 25 °C

-

-

10

µA

VGS = -8 V; VDS = 0 V; Tj = 25 °C

-

-

-10

µA

VGS = 4.5 V; VDS = 0 V; Tj = 25 °C

-

-

1

µA

VGS = -4.5 V; VDS = 0 V; Tj = 25 °C

-

-

-1

µA

VGS = 2.5 V; VDS = 0 V; Tj = 25 °C

-

-

100

nA

IGSS

gate leakage current

VGS = -2.5 V; VDS = 0 V; Tj = 25 °C

-

-

-100

nA

VGS = 4.5 V; ID = 300 mA; Tj = 25 °C

-

2

2.7

Ω

VGS = 4.5 V; ID = 300 mA; Tj = 150 °C

-

4.1

5.6

Ω

VGS = 2.5 V; ID = 200 mA; Tj = 25 °C

-

2.1

2.9

Ω

VGS = 1.8 V; ID = 50 mA; Tj = 25 °C

-

2.2

3.1

Ω

RDSon

drain-source on-state

resistance

VGS = 1.5 V; ID = 10 mA; Tj = 25 °C

-

2.4

4.6

Ω

gfs

forward

transconductance

VDS = 5 V; ID = 300 mA; Tj = 25 °C

-

1

-

S

Dynamic characteristics

QG(tot)

total gate charge

-

0.46

0.7

nC

QGS

gate-source charge

-

0.03

-

nC

QGD

gate-drain charge

VDS = 30 V; ID = 300 mA; VGS = 4.5 V;

Tj = 25 °C

-

0.11

-

nC

Ciss

input capacitance

-

27

-

pF

Coss

output capacitance

-

3

-

pF

Crss

reverse transfer

capacitance

VDS = 30 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

2

-

pF

td(on)

turn-on delay time

-

1

-

ns

tr

rise time

-

2

-

ns

td(off)

turn-off delay time

-

5

-

ns

tf

fall time

VDS = 30 V; ID = 300 mA; VGS = 4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

-

4

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 220 mA; VGS = 0 V; Tj = 25 °C

-

0.7

1.2

V

NX6008NBKS

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Product data sheet

19 August 2021

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