Nexperia

NX6008NBKS

60 V, dual N-channel Trench MOSFET

VDS (V)

0

5

4

2

3

1

aaa-033693

0.4

0.6

0.2

0.8

1.0

ID

(A)

0

1.8 V

1.5 V

2.4 V

1.2 V

1.4 V

4.5 V

VGS = 1.0 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-033694

VGS (V)

0

1.5

1.0

0.5

10-4

10-5

10-3

ID

(A)

10-6

min

typ

max

Tj = 25 °C; VDS = 5 V

Fig. 7. Subthreshold drain current as a function of

gate-source voltage

aaa-033695

ID (A)

0

1.2

0.8

0.4

4

8

12

RDSon

0

1.8 V

1.5 V

2.5 V

VGS = 4.5 V

1.2 V

1.0 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

VGS (V)

0

5

4

2

3

1

aaa-033696

4

8

12

RDSon

0

Tj = 25 °C

Tj = 150 °C

ID = 270 mA

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NX6008NBKS

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Product data sheet

19 August 2021

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