Nexperia

NX6008NBKS

60 V, dual N-channel Trench MOSFET

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

-

60

V

VGS

gate-source voltage

Tj = 25 °C

-8

8

V

VGS = 4.5 V; Tamb = 25 °C

[1]

-

220

mA

ID

drain current

VGS = 4.5 V; Tamb = 100 °C

[1]

-

140

mA

IDM

peak drain current

Tamb = 25 °C; single pulse; tp ≤ 10 µs

-

880

mA

[2]

-

260

mW

Tamb = 25 °C

[1]

-

286

mW

Ptot

total power dissipation

Tsp = 25 °C

-

1.3

W

Tj

junction temperature

-55

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

Source-drain diode

IS

source current

Tamb = 25 °C

[1]

-

220

mA

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

Tamb (°C)

-75

175

125

25

75

-25

aaa-030137

40

80

120

Pder

(%)

0

Fig. 1. Normalized total power dissipation as a

function of ambient temperature

Tamb (°C)

-75

175

125

25

75

-25

aaa-030138

40

80

120

Ider

(%)

0

Fig. 2. Normalized continous drain current as a

function of ambient temperature

NX6008NBKS

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Product data sheet

19 August 2021

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