Nexperia

NX6008NBKS

60 V, dual N-channel Trench MOSFET

VGS (V)

0

2.5

2.0

1.0

1.5

0.5

aaa-033697

0.4

0.8

1.2

ID

(A)

0

Tj = 25 °C

Tj = 150 °C

VDS = 5 V

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60

180

120

0

60

aaa-033698

1.0

1.5

0.5

2.0

2.5

a

0

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

Tj (°C)

-60

180

120

0

60

aaa-033699

0.5

1.0

1.5

VGS(th)

(V)

0

min

max

typ

ID = 250 μA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

VDS (V)

10-1

102

10

1

aaa-033710

10

1

102

C

(pF)

10-1

Crss

Coss

Ciss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

NX6008NBKS

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Product data sheet

19 August 2021

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