Nexperia

NX6008NBKS

60 V, dual N-channel Trench MOSFET

aaa-033701

QG (nC)

0

0.6

0.4

0.2

2

3

1

4

5

VGS

(V)

0

ID = 300 mA; VDS = 30 V; Tj = 25 °C

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 15. Gate charge waveform definitions

VSD (V)

0

1.2

0.8

0.4

aaa-033702

0.4

0.8

1.2

IS

(A)

0

Tj = 150 °C

Tj = 25 °C

VGS = 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values

11. Test information

t1

t2

P

t

006aaa812

duty cycle δ =

t1

t2

Fig. 17. Duty cycle definition

NX6008NBKS

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Product data sheet

19 August 2021

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