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PCF5271CVM100 bảng dữ liệu(PDF) 34 Page - Freescale Semiconductor, Inc |
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PCF5271CVM100 bảng dữ liệu(HTML) 34 Page - Freescale Semiconductor, Inc |
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34 / 56 page ![]() MCF5271 Integrated Microprocessor Hardware Specification, Rev. 1.2 Preliminary Electrical Characteristics Freescale Semiconductor 34 8.3 DC Electrical Specifications 7 Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1). 8 Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1). 9 Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written in conformance with Psi-JT. 10 Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written in conformance with Psi-JT. The average chip-junction temperature (TJ) in °C can be obtained from: (1) Where: TA= Ambient Temperature, °C Θ JMA= Package Thermal Resistance, Junction-to-Ambient, °C/W PD= PINT + PI/O PINT= IDD × VDD, Watts - Chip Internal Power PI/O= Power Dissipation on Input and Output Pins — User Determined For most applications PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if PI/O is neglected) is: (2) Solving equations 1 and 2 for K gives: K = PD × (TA + 273 °C) + ΘJMA × PD 2 (3) where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations (1) and (2) iteratively for any value of TA. Table 28. DC Electrical Specifications1 Characteristic Symbol Min Typical Max Unit Core Supply Voltage VDD 1.35 — 1.65 V Pad Supply Voltage OVDD 3— 3.6 V Input High Voltage VIH 0.7 OVDD —3.65 V Input Low Voltage VIL VSS – 0.3 — 0.35 OVDD V Input Hysteresis VHYS 0.06 OVDD —— mV Input Leakage Current Vin = VDD or VSS, Input-only pins Iin –1.0 — 1.0 µA T J T A P D Θ JMA × () + = P D KT J 273 °C + () ÷ = |
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