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HIP2210EVAL1Z bảng dữ liệu(PDF) 22 Page - Renesas Technology Corp

tên linh kiện HIP2210EVAL1Z
Giải thích chi tiết về linh kiện  100V, 3A Source, 4A Sink, High Frequency Half-Bridge Drivers with HI/LI or Tri-Level PWM Input and Adjustable Dead Time
PDF  28 Pages
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nhà sản xuất  RENESAS [Renesas Technology Corp]
Trang chủ  http://www.renesas.com
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HIP2210, HIP2211
6. PCB Layout Guidelines
FN9347 Rev.1.01
Page 22 of 27
Jun.23.20
6.
PCB Layout Guidelines
The AC performance of the HIP2210/HIP2211 depends significantly on the design of the PCB. The following
layout design guidelines are recommended to achieve optimum switching performance:
• It may be necessary to add resistance to dampen resonating parasitic circuits. PCB designs with long trace
lengths on the LO and HO outputs may require series gate resistors on the bridge FETs to dampen the
oscillations. It is good practice to place 0Ω chip resistors in series with the HO and LO driver outputs to the
MOSFET gates.
• The routing of the half-bridge switching phase node to the HIP2210/HIP2211 HS pin should implement optimum
layout practices. The PCB trace should be short and wide to minimize lead inductance. Also, route the HO trace
directly above or below the HS trace to minimize ground loops.
• Understand how power currents flow. The high amplitude di/dt currents of the half-bridge FETs induce
significant voltage transients on the associated traces and ground planes. Keep these high current paths away
from sensitive low voltage signal traces.
• Avoid paralleling high di/dt traces with low-level signal lines. High di/dt induces currents in the low-level signal
lines.
• Keep power loops as short as possible by routing the source and return traces on adjacent layers, directly
above and beneath each other.
• When practical, minimize impedances in low-level signal circuits. The noise magnetically induced on a 10k
resistor is 10x larger than the noise on a 1k resistor.
• Be aware of magnetic fields emanating from transformers and inductors. Core gaps in these structures are
especially bad for emitting flux.
• If you must have traces close to magnetic devices, align the traces so that they are parallel to the flux lines.
• Use low inductance components such as SMD chip resistors and chip capacitors with low Equivalent Series
Inductance (ESL).
• Use decoupling capacitors to reduce the influence of parasitic inductance. To be effective, these capacitors
must also have the shortest possible lead lengths to the component pins. If vias are used, connect several
paralleled vias to reduce their inductance.
• Keep high dv/dt nodes away from low-level circuits. Guard ringing and/or shielding can be used to shunt away
dv/dt injected currents from sensitive circuits. This is especially true for the RDT pin and resistor, and also the
PWM and HI/LI signals.
• Avoid having a signal ground plane under a high dv/dt circuit. This injects high di/dt currents into the signal
ground paths.
• Calculate power dissipation and voltage drop calculations for the power traces. Most PCB/CAD programs have
built-in tools for calculation of trace resistance.
• Large power components (power FETs, electrolytic capacitors, power resistors, etc.) have internal parasitic
inductance, which cannot be eliminated. Accounted for this in the PCB layout and circuit design.
• If you simulate your circuits, consider including parasitic components.
• If available, connect the EPAD on the bottom side of the package to the PCB ground plane with thermal vias for
heat removal.



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