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HIP2210EVAL1Z bảng dữ liệu(PDF) 6 Page - Renesas Technology Corp |
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HIP2210EVAL1Z bảng dữ liệu(HTML) 6 Page - Renesas Technology Corp |
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6 / 28 page ![]() HIP2210, HIP2211 2. Specifications FN9347 Rev.1.01 Page 6 of 27 Jun.23.20 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Information Parameter (Note 5) Minimum Maximum Unit Supply Voltage, VDD -0.3 +20 V Boot Voltage, HB Referenced to HS -0.3 +20 V Bootstrap Voltage, HB Referenced to VSS -0.3 +120 V Bootstrap Voltage, HB Referenced to VDD -0.3 +110 V Continuous Voltage on HS The greater of [-10 or -(20 - VDD)] +120 V EN, HI, and LI Voltage -0.3 VDD + 0.3 V PWM, VREF, RDT Voltage -0.3 +6 V Voltage on LO -0.3 VDD + 0.3 V Transient Voltage on LO (Repetitive Transient for 100ns) -2 - V Voltage on HO VHS - 0.3 VHB + 0.3 V Transient Voltage on HO (Repetitive Transient for 100ns) VHS - 2 - V ESD Ratings Value Unit Human Body Model (Tested per JS-001-2017) 2.5 kV Charged Device Model (Tested per JS-002-2014) 1 kV Latch-Up (Tested per JESD78E; Class 2, Level A) 100 mA CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product reliability and result in failures not covered by warranty. Note: 5. All voltages referenced to VSS unless otherwise specified. Package Type Thermal Resistance (Typical) Max Power Dissipation at +25°C in Free Air (W) (Note 10) θJA (°C/W) θJC (°C/W) 8 Ld SOIC (Notes 8, 9) 102 50 1.22 10 Ld TDFN, 8 Ld DFN (Notes 6, 7) 40 2.5 3.12 Notes: 6. θJA is measured in free air with the component mounted on a high-effective thermal conductivity test board with direct attach features. See TB379. 7. For θJC, the case temperature location is the center of the exposed metal pad on the package underside. 8. θJA is measured with the component mounted on a high-effective thermal conductivity test board in free air. See TB379. 9. For θJC, the case temperature location is taken at the package top center. 10. Specified at published junction to ambient thermal resistance for a junction temperature of +150°C. See Note 6 for test condition to establish junction to ambient thermal resistance. Parameter Minimum Maximum Unit Maximum Junction Temperature -65 +150 °C Maximum Storage Temperature Range -55 +140 °C Pb-Free Reflow Profile see TB493 |
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