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FXLS8964AF bảng dữ liệu(PDF) 53 Page - NXP Semiconductors |
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FXLS8964AF bảng dữ liệu(HTML) 53 Page - NXP Semiconductors |
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53 / 98 page ![]() NXP Semiconductors FXLS8964AF 3-Axis Low-g Accelerometer FXLS8964AF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2020. All rights reserved. Objective data sheet Rev. 2 — 30 October 2020 53 / 98 After this initial delay, all subsequent data samples are made available at the ODR rate. For all other operating modes and settings the first sample is produced within 1 ODR period. Notes: • When the device transitions from WAKE to SLEEP or from SLEEP to WAKE modes there is a 500 µs (nominal) delay between the last acquisition at the WAKE/SLEEP mode ODR and the first acquisition at the SLEEP/WAKE mode ODR. • The ODR may only be changed in Standby mode, with SENS_CONFIG1[ACTIVE] = 0 and SENS_CONFIG4[INT2_FUNC] = 0. Table 51. WAKE and SLEEP Low Power mode ODR and decimation settings ODR[3] ODR[2] ODR[1] ODR[0] ODR Selection (Hz) Decimation selection (samples) Noise RMS (mg)[1][2] IDD (µA) 0 0 0 0 3200 1 12.39 150 0 0 0 1 1600 1 11.77 75 0 0 1 0 800 1 11.19 38 0 0 1 1 400 1 10.91 20 0 1 0 0 200 1 10.71 11 0 1 0 1 100 1 10.63 5.3 0 1 1 0 50 1 10.71 3.1 0 1 1 1 25 1 10.66 1.8 1 0 0 0 12.5 1 10.65 1.4 1 0 0 1 6.25 1 10.69 1.0 1 0 1 0 3.125 1 10.77 0.80 1 0 1 1 1.563 1 10.63 0.70 1 1 0 0 0.781 1 10.57 0.65 1 1 0 1 0.781 1 10.57 0.65 1 1 1 0 0.781 1 10.57 0.65 1 1 1 1 0.781 1 10.57 0.65 [1] Values are for ±2 g FSR only. [2] Based on post board mount characterization data. Tested on a mechanically isolated granite table to provide isolation from environmental vibration. Table 52. WAKE and SLEEP High Performance mode ODR and decimation settings ODR[3] ODR[2] ODR[1] ODR[0] ODR selection (Hz) Decimation selection (samples) Noise RMS (mg)[1][2] IDD (µA) 0 0 0 0 3200 1 12.51 150 0 0 0 1 1600 2 8.57 150 0 0 1 0 800 4 5.79 150 0 0 1 1 400 8 4.00 150 0 1 0 0 200 16 2.80 150 |
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