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STM8S005C6 bảng dữ liệu(PDF) 62 Page - STMicroelectronics

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STM8S005C6 bảng dữ liệu(HTML) 62 Page - STMicroelectronics

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Electrical characteristics
STM8S005C6 STM8S005K6
62/97
DocID022186 Rev 4
9.3.5
Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
General conditions: TA = -40 to 85 °C.
Table 34. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
VRM
Data retention mode(1)
1.
Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
Halt mode (or reset)
VIT-max
(2)
2.
Refer to Table 18 on page 47 for the value of VIT-max.
V
Table 35. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min(1)
1.
Data based on characterization results, not tested in production.
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU 16 MHz
2.95
-
5.5
V
tprog
Standard programming time (including
erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
--
6.0
6.6
ms
Fast programming time for 1 block
(128 bytes)
--
3.0
3.3
ms
terase
Erase time for 1 block (128 bytes)
-
-
3.0
3.3
ms
NRW
Erase/write cycles(2) 
(program memory)
2.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
TA 85 °C
100
-
-
cycles
Erase/write cycles(2)
(data memory)
100 k
-
-
tRET
Data retention (program memory)
after 100 erase/write cycles at
TA 85 °C
TRET = 55° C
20
-
-
years
Data retention (data memory) after
10 k erase/write cycles at TA 85 °C
20
-
-
Data retention (data memory) after
100 k erase/write cycles at TA 85 °C
TRET = 85° C
1.0
-
-
IDD
Supply current (Flash programming or
erasing for 1 to 128 bytes)
--
2.0
-
mA



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