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STM8S005C6 bảng dữ liệu(PDF) 59 Page - STMicroelectronics |
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STM8S005C6 bảng dữ liệu(HTML) 59 Page - STMicroelectronics |
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59 / 97 page ![]() DocID022186 Rev 4 59/97 STM8S005C6 STM8S005K6 Electrical characteristics 84 Figure 18. HSE oscillator circuit diagram HSE oscillator critical gm formula Rm: Notional resistance (see crystal specification) Lm: Notional inductance (see crystal specification) Cm: Notional capacitance (see crystal specification) Co: Shunt capacitance (see crystal specification) CL1=CL2=C: Grounded external capacitance gm >> gmcrit Table 31. HSE oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSE External high speed oscillator frequency -1 - 16 MHz RF Feedback resistor - - 220 - k C(1) Recommended load capacitance (2) -- - 20 pF IDD(HSE) HSE oscillator power consumption C = 20 pF, fOSC = 16 MHz -- 6 (startup) 1.6 (stabilized)(3) mA C = 10 pF, fOSC = 16 MHz -- 6 (startup) 1.2 (stabilized)(3) gm Oscillator transconductance - 5 - - mA/V tSU(HSE) (4) Startup time VDD is stabilized - 1 - ms 1. C is approximately equivalent to 2 x crystal Cload. 2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with small Rm value. Refer to crystal manufacturer for more details 3. Data based on characterization results, not tested in production. 4. tSU(HSE) is the start-up time measured from the moment it is enabled (by software) to a stabilized 24 MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. OSCOUT OSCIN fHSE to core CL1 CL2 RF STM8 Resonator Consumption control gm Rm Cm Lm CO Resonator g mcrit 2 f HSE 2 R m 2Co C + 2 = |
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