4

UCC24636

SLUSCG2A – MARCH 2016 – REVISED MARCH 2016

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Copyright © 2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Bias supply voltage, VDD

–0.3

30

V

Continuous gate current sink, DRV

50

mA

Continuous gate current source, DRV

–50

mA

Peak VPC pin current

–1.2

mA

Gate drive voltage at DRV

–0.3

Self-limiting

V

Voltage range, VPC, VSC

–0.3

4.5

V

Operating junction temperature range

–55

150

°C

Lead temperature 0.6 mm from case for 10 seconds

260

°C

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as

±2000 V may actually have higher performance.

(2)

JEDEC document JEP157 states that 500-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V

may actually have higher performance.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic

discharge

±2000

V

±500

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Bias supply operating voltage

3.75

28

V

VDD bypass capacitor

0.22

µF

Operating junction temperature

-40

125

°C

Operating range

–0.3

2.2

V

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

UCC24636

UNIT

DBV (SOT23)

6 PINS

Junction-to-ambient thermal resistance

180

°C/W

Junction-to-case (top) thermal resistance

71.2

°C/W

Junction-to-board thermal resistance

44

°C/W

Junction-to-top characterization parameter

5.1

°C/W

Junction-to-board characterization parameter

13.8

°C/W