HD64F2149YV datasheet(9/1075 Pages) RENESAS

9 / 1075 page

Rev. 3.00 Jan 18, 2006 page ix of xxviii

Item

Page

Revision (See Manual for Details)

24.12 Usage Notes

24.12.1 On-Chip

Peripheral Module

24.12.2 Entering

Subactive/Watch

Mode and DTC

Module Mode

770

Section 24.12 added

25.6 Flash Memory

Characteristics

Table 25.15 Flash

Memory

Characteristics

805

Table 25.15 amended

Item

Symbol

Min

Typ

Max

Unit

Test

Condition

Programming time*

*2 *4

—

200

ms/

128 bytes

Erase time*

*3 *6

—

100

1200

ms/block

Reprogramming count

WEC

100*

10000*

—

Times

Data retention time*

DRP

—

Years

806

Notes *8, *9, and *10 added

Notes: 8. Minimum number of times for which all characteristics

are guaranteed after rewriting (Guarantee range is 1 to

minimum value).

9. Reference value for 25C

° (as a guide line, rewriting should

normally function up to this value).

10. Data retention characteristics when rewriting is performed

within the specification range, including the minimum value.

A.5 Bus Status

during Instruction

Execution

Table A.6 Instruction

Execution Cycle

867, 872,

873

Note

* 9 deleted

B.2 Register

Selection Conditions

884

Table amended

Lower

Address

Name

H8S/2149 Register

Selection Conditions

H8S/2169 Register

Selection Conditions

Module Name

H'FE43

HICR3

H'FE44

WUEMRB

MSTP0 = 0

Interrupt controller

H'FE46

PGODR

—

No conditions

Ports

B.3 Functions

927

SYSCR2 H'FF83 HIF (XBS)

Figure added

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