4

TMP411

SBOS383D – DECEMBER 2006 – REVISED DECEMBER 2016

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Copyright © 2006–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

MIN

MAX

UNIT

Input voltage

Pins 2, 3, 4 only

–0.5

VS + 0.5

V

Input voltage

Pins 6, 7, 8 only

–0.5

7

V

Input current

10

mA

Power supply, Vs

7

V

Operating temperature range

–55

127

°C

Junction temperature, TJ(max)

150

°C

Storage temperature, Tstg

–60

130

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±3000

V

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

±1000

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

V+

Supply voltage

2.7

3.3

5.5

V

TA

Operating free-air temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

TMP411

UNIT

D (SOIC)

DGK (VSSOP)

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

112.3

166.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

59.4

58.3

°C/W

RθJB

Junction-to-board thermal resistance

53.0

86.7

°C/W

ψJT

Junction-to-top characterization parameter

13.6

7.5

°C/W

ψJB

Junction-to-board characterization parameter

52.4

85.2

°C/W