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PIC18F44J10-E/ML bảng dữ liệu(PDF) 297 Page - Microchip Technology |
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PIC18F44J10-E/ML bảng dữ liệu(HTML) 297 Page - Microchip Technology |
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297 / 358 page ![]() © 2007 Microchip Technology Inc. Preliminary DS39682C-page 295 PIC18F45J10 FAMILY 23.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†) Ambient temperature under bias............................................................................................................ .-40°C to +100°C Storage temperature .............................................................................................................................. -65°C to +150°C Voltage on any digital-only input MCLR I/O pin with respect to VSS ........................................................... -0.3V to 6.0V Voltage on any combined digital and analog pin with respect to VSS ............................................ -0.3V to (VDD + 0.3V) Voltage on VDDCORE with respect to VSS ................................................................................................... -0.3V to 2.75V Voltage on VDD with respect to VSS ........................................................................................................... -0.3V to 4.0V Total power dissipation (Note 1) ............................................................................................................................... 1.0W Maximum current out of VSS pin ........................................................................................................................... 300 mA Maximum current into VDD pin .............................................................................................................................. 250 mA Input clamp current, IIK (VI < 0 or VI > VDD) .............................................................................................................. 0 mA Output clamp current, IOK (VO < 0 or VO > VDD) ........................................................................................................ TBD Maximum output current sunk by any PORTB and PORTC I/O pin........................................................................ 25 mA Maximum output current sunk by any PORTA, PORTD, and PORTE I/O pin........................................................... 4 mA Maximum output current sourced by any PORTB and PORTC I/O pin .................................................................. 25 mA Maximum output current sourced by any PORTA, PORTD, and PORTE I/O pin ..................................................... 4 mA Maximum current sunk by all ports combined ....................................................................................................... 200 mA Maximum current sourced by all ports combined.................................................................................................. 200 mA Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD – ∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOL x IOL) † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. |
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