CYPAS213 datasheet(20/34 Pages) INFINEON

20 / 34 page

Datasheet

002-37178 Rev. *B

2023-10-10

EZ-PD™ PAG2S-PS integrated USB PD and

synchronous-rectification controller

Electrical specifications

FGPIO_OUT1

GPIO Fout;

2.85 V  VDDD  5.5 V.

Fast Strong mode.

––

MHz

–

FGPIO_OUT2

GPIO Fout;

2.85 V  VDDD  5.5 V.

Slow Strong mode.

FGPIO_IN

GPIO input operating

frequency;

2.85 V  VDDD  5.5 V

Flash macro

FLASH_ERASE

Row erase time

–

15.5

–

FLASH_WRITE

Row (Block) write time

(Erase and program)

FLASH_DR

Flash data retention

–

Years

25°C to 55°C,

all VDDD

FLASH_ENPB

Flash write endurance 100K

Cycles

25°C to 85°C,

all VDDD

FLASH_ENPB1

Flash write endurance 10K

25°C to 125°C,

all VDDD

FLASH_ROW_PGM Row program time

after erase

–7

–

TBULKERASE

Bulk erase time (32KB) –

TDEVPROG

Total device program

time

–7.5

FRET1

Flash retention,

TA ≤ 55°C,

100K P/E cycles

–Years

FRET2

Flash retention,

TA ≤ 85°C,

10K P/E cycles

FRET3

Flash retention,

TA ≤ 105°C,

10K P/E cycles

SWD

F_swdclk1

All VDDD

–

MHz

–

T_swdi_setup

T = 1/f SWDCLK

0.25 × T

–

T_swdi_hold

T_swdo_valid

–

0.50 × T

T_swdo_hold

–

ILO / IMO / POR

FIMO

IMO frequency

2436

48MHz

–

IMO_STL

IMOsettlingtimewhen

trim register is

changed

––

200

25°C TA, All VDDD,

48 MHz  FIMO 24 MHz

FCPU

CPU input frequency

MHz

–

FILO

ILO frequency

1540

80kHz

Table 6

Functional block specifications (continued)

Parameter

Description

Min

Typ

Max

Unit

Details/conditions

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