CYPAS213 datasheet(16/34 Pages) INFINEON

16 / 34 page

Datasheet

002-37178 Rev. *B

2023-10-10

EZ-PD™ PAG2S-PS integrated USB PD and

synchronous-rectification controller

Electrical specifications

4.1

Absolute maximum ratings

4.2

Device-level specifications

Table 4

Absolute maximum ratings

Parameter

Description

Min

Typ

Max

Unit

VBUS_IN_MAX

Maximum input supply voltage

–0.3

–

VDDD_MAX

VDDD supply voltage

–

V_SR_DRAIN_MAX Voltage on SR_SEN pin

VCC_PIN_ABS

Voltage on CC1, CC2 pins

VGPIO_ABS

GPIO voltage

–0.5

VDDD+0.5

IGPIO_ABS

Current per GPIO

–

I_LU

Pin current for latch-up

–100

100

ESD_HBM

Electrostatic discharge human body model

–

2000

ESD_CDM

Electrostatic discharge charged device model

500

Table 5

Device-level specifications

Parameter

Description

Min

Typ

Max

Unit Details/conditions

Memory size

FLASH_SIZE Flash memory size

–

–KB

SONOS Flash amount

(bytes)

SRAM_SIZE SRAM memory size

SRAM amount (bytes)

SROM_SIZE SROM memory size

Silicon power

VDDD_REG

VDDD output with

VBUS 5.5 V to 30 V

4.6

5.4

V–

VDDD_MIN

VDDD output with

VBUS 3.15 V to 5.5 V

VBUS – 0.33

–

VBUS_IN

Power supply input voltage 3.15

30.0

VCCD

Output voltage for core logic –

1.8

–

VDDWRITE

Supply voltage for flash

write

3–

5.5

Cefc

External regulator voltage

bypass for VCCD

100

120

X5R ceramic or better

Cexc

Power supply capacitor for

VDDD

44.7

–µF

Cexv

Power supply decoupling

capacitor for VBUS_IN

–1

Cexcpp

Capacitor between SR_CPP

and SR_CPN pins

0.1

–

Igpio_abs

Current per GPIO

–

Absolute maximum

CYPAS213 bảng dữ liệu(PDF) 16 Page - Infineon Technologies AG

CYPAS213 bảng dữ liệu(HTML) 16 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34

bảng dữ liệu tải về

Link URL