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CC1110-RTY1 bảng dữ liệu(PDF) 149 Page - Texas Instruments

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CC1110-RTY1 bảng dữ liệu(HTML) 149 Page - Texas Instruments

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CC1110
CC1110 PRELIMINARY Datasheet (Rev. 1.01) SWRS033A
Page 149 of 202
13.14.1.2 CPU Flash Write
The CPU can also write directly to the
flash. The CPU writes data to the Flash
Write Data register, FWDATA. The flash
memory is written each time two bytes
have been written to FWDATA. The CPU
can poll the FCTL.SWBSY status to
determine when the flash is ready for two
more bytes to be written to FWDATA..
Performing flash write from XDATA
The steps required to start a flash write
operation from XDATA are shown in
Figure 30 on page 149.
Disable interrupts
BUSY=1?
Setup FCTL, FWT,
FADDRH, FADDRL
Write FWDATA
YES
; Write 32-bit word from XDATA
; Assumes 26 MHz system clock is used
;
CLR
EA
;mask interrupts
C1:
MOV
A,FCTL
;wait until flash controller is ready
JB
ACC.7,C1
MOV
FADDRH,#00h
;setup flash address high
MOV
FADDRL,#01h
;setup flash address low
MOV
FWT,#2Ah
;setup flash timing
MOV
FCTL,#02h
;set flash page write
MOV
FWDATA,#12h
;first byte
MOV
FWDATA,#34h
;second byte, initiates write
Figure 30 : Flash write performed from XDATA
13.14.2 Flash Page Erase
A page erase is initiated by setting
FCTL.ERASE to 1. The page addressed
by FADDRH[6:1] is erased when a page
erase is initiated. Note that if a page erase
is initiated simultaneously with a page
write, i.e. FCTL.WRITE is set to 1, the
page erase will be performed before the
page write operation. The FCTL.BUSY bit
can be polled to see when the page erase
has completed.
Note: if flash erase operations are
performed from within flash memory and
the watchdog timer is enabled, a watchdog
timer interval must be selected that is
longer than 20 ms, the duration of the
flash erase operation, so that the CPU will
manage to clear the watchdog timer.



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