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MPC5675KFF0VMS2R bảng dữ liệu(PDF) 91 Page - NXP Semiconductors |
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MPC5675KFF0VMS2R bảng dữ liệu(HTML) 91 Page - NXP Semiconductors |
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91 / 147 page ![]() Electrical characteristics MPC5675K Microcontroller Data Sheet, Rev. 9 NXP Semiconductors 91 4VIL_C CC CMOS input buffer low voltage (hysteresis enabled) VSS – 0.3 0.35 × VDD_HV_PDI V 5VIL_C CC CMOS input buffer low voltage (hysteresis disabled) VSS – 0.3 0.42 × VDD_HV_PDI V 6VHYS_C CC CMOS input buffer hysteresis 0.1 × VDD_HV_PDI —V 7IACT_S CC Selectable weak pullup/pulldown current 25 150 µA 8VOH CC Output high voltage 0.8 × VDD_HV_PDI —V 9VOL CC Output low voltage — 0.2 × VDD_HV_PDI V 1 Over- and undershoots occurring due to impedance mismatch of the external driver and the transmission line at PDI pads in input mode can be allowed up to 0.7 V repeatedly throughout the product expected lifetime and will not cause any long term reliability issue. Table 39. Drive current Pad Drive Mode Minimum IOH (mA) 1 1 I OH is defined as the current sourced by the pad to drive the output to VOH. Minimum IOL (mA) 2 2 I OL is defined as the current sunk by the pad to drive the output to VOL. PDI Fast All 26.2 84.8 PDI Medium All 19.2 52.1 Table 40. PDI pads AC electrical characteristics No. Name Prop. Delay (ns) L → H/H → L1 Rise/Fall Edge (ns) Drive Load (pF) Drive/Slew Rate Select MinMax MinMax MSB, LSB 1 PDI Medium 0.8/0.7 -------- 1.1/1.08 5.5/4.5 1.02/1 — 50 11 12/8.3 3.5/2.3 200 49/22 9.1/6 50 10 60/31 14/9.2 200 102/44 18/12 50 01 119/53 24/16 200 722/302 126/85 50 00 772/325 136/90 200 Table 38. PDI pads DC electrical characteristics1 (continued) No. Symbol Parameter Min Max Unit |
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