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MPC5675KFF0VMS2R bảng dữ liệu(PDF) 89 Page - NXP Semiconductors |
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MPC5675KFF0VMS2R bảng dữ liệu(HTML) 89 Page - NXP Semiconductors |
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89 / 147 page ![]() Electrical characteristics MPC5675K Microcontroller Data Sheet, Rev. 9 NXP Semiconductors 89 3.17.3 I/O pad current specifications The power consumption of an I/O segment is dependent on the usage of the pins on a particular segment. The power consumption is the sum of all output pin currents for a particular segment. The output pin current can be calculated based on the voltage, frequency, and load on the pin. 3.17.4 Power Sequence Pin States for GPIO Pads 2 Medium 1 — 15 2 — 12 — — 40 2.5 — 7 25 1 — 15 4 — 25 — — 20 2.5 — 7 50 1 — 15 8 — 40 — — 13 2.5 — 7 100 1 — 15 14 — 70 — — 7 2.5 — 7 200 3Fast 1 — 6 1 — 4 — — 72 3 — 40 25 1—6 1.5 — 7 — — 55 7— 40 50 1—6 3 — 12 — — 40 7 — 40 100 1—6 5 — 18 — — 25 7 — 40 200 4 Symmetric 1—8 1 — 5 — — 50 3— 25 25 5 Pullup/down (3.6 V max) ————— 7500 —— ———— 50 1 The values provided in this table are not applicable for PDI and EBI/DRAM interface. 2 Slope at rising/falling edge. 3 Data based on characterization results, not tested in production. Table 35. I/O pad current specifications Pad Type Load (pF) Frequency (MHz) VDD_HV_IO (V) Current (mA) GP Slow/Medium 20 4 3.6 0.30 GP Slow/Symmetric 20 10 3.6 0.76 GP Slow/Fast 20 45 3.6 3.40 GP Slow 20 0.5 3.6 0.04 Table 36. Power sequence pin states for GPIO pads VDD_LV_COR VDD_HV_IO Pad Function Low Low Outputs Disabled Low High Outputs Disabled High Low Outputs Disabled Table 34. GP pads AC electrical characteristics1 (continued) No. Pad Tswitchon1 (ns) Rise/Fall2 (ns) Frequency (MHz) Current slew3 (mA/ns) Load drive (pF) Min Typ Max Min Typ Max Min Typ Max Min Typ Max |
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