FS32K112BHTXMLFTR datasheet(13/100 Pages) NXP

13 / 100 page

Table 4. Voltage and current operating requirements for S32K14xW series 1

Symbol

Description

Min.

Max.

Unit

Notes

VDD2

Supply voltage

3.13

5.5

VDD_OFF

Voltage allowed to be developed on VDD

pin when it is not powered from any

external power supply source.

0.1

VDDA

Analog supply voltage

3.13

5.5

VDD – VDDA

VDD-to-VDDA differential voltage

– 0.1

0.1

VREFH

ADC reference voltage high

3.13

VDDA + 0.1

VREFL

ADC reference voltage low

-0.1

0.1

VODPU

Open drain pullup voltage level

VDD

IINJPAD_DC_OP6

Continuous DC input current (positive /

negative) that can be injected into an I/O

-3

IINJSUM_DC_OP

Continuous total DC input current that can

be injected across all I/O pins such that

there's no degradation in accuracy of

analog modules: ADC and ACMP (See

section Analog Modules)

—

1. Typical conditions assumes VDD = VDDA = VREFH = 5 V, temperature = 25 °C and typical silicon process unless otherwise

stated.

2. As VDD varies between the minimum value and the absolute maximum value the analog characteristics of the I/O and the

ADC will both change. See section I/O parameters and ADC electrical specifications respectively for details.

3. VDD and VDDA must be shorted to a common source on PCB. The differential voltage between VDD and VDDA is for RF-AC

only. Appropriate decoupling capacitors to be used to filter noise on the supplies. See application note AN5032 for

reference supply design for SAR ADC.

4. VREFH should always be equal to or less than VDDA + 0.1 V and VDD + 0.1 V

5. Open drain outputs must be pulled to VDD.

6. When input pad voltage levels are close to VDD or VSS, practically no current injection is possible.

4.3 Thermal operating characteristics

Table 5. Thermal operating characteristics for S32K1xx series

Symbol

Parameter

Value

Unit

Min.

Typ.

Max.

TA C-Grade Part

Ambient temperature under bias

−40

—

851

℃

TJ C-Grade Part

Junction temperature under bias

−40

—

1051

℃

TA V-Grade Part

Ambient temperature under bias

−40

—

1051

℃

TJ V-Grade Part

Junction temperature under bias

−40

—

1251

℃

TA M-Grade Part

Ambient temperature under bias

−40

—

1252

℃

TJ M-Grade Part

Junction temperature under bias

−40

—

1352

℃

1. Values mentioned are measured at ≤ 112 MHz in HSRUN mode.

2. Values mentioned are measured at ≤ 80 MHz in RUN mode.

General

S32K1xx Data Sheet, Rev. 12, 02/2020

NXP Semiconductors

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