STM32L100RB datasheet(50/103 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L100C6 STM32L100R8/RB

50/103

DocID024295 Rev 5

Table 17. Current consumption in Run mode, code with data processing running from RAM

Symbol

Parameter

Conditions

fHCLK

Typ

Max(1)

Unit

105 °C

IDD (Run

from RAM)

Supply current in

Run mode, code

executed from

RAM, Flash

switched off

fHSE = fHCLK

up to 16 MHz,

included

fHSE = fHCLK/2 above

16 MHz

(PLL ON)(2)

Range 3,

VCORE=1.2 V

VOS[1:0] = 11

1 MHz

200

300

µA

2 MHz

380

500

4 MHz

720

860

Range 2,

VCORE=1.5 V

VOS[1:0] = 10

4 MHz

0.9

8 MHz

1.65

16 MHz

3.2

3.7

Range 1,

VCORE=1.8 V

VOS[1:0] = 01

8 MHz

2.5

16 MHz

4.5

32 MHz

7.7

8.5

HSI clock source

(16 MHz)

Range 2,

VCORE=1.5 V

VOS[1:0] = 10

16 MHz

3.3

3.8

Range 1,

VCORE=1.8 V

VOS[1:0] = 01

32 MHz

7.8

9.2

MSI clock, 65 kHz

Range 3,

VCORE=1.2 V

VOS[1:0] = 11

65 kHz

µA

MSI clock, 524 kHz

524 kHz

110

160

MSI clock, 4.2 MHz

4.2 MHz

700

820

1. Guaranteed by characterization results, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

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