STM32L100RB datasheet(47/103 Pages) STMICROELECTRONICS

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STM32L100C6 STM32L100R8/RB

Electrical characteristics

6.3.3

Embedded internal reference voltage

The parameters given in the following table are based on characterization results, unless

otherwise specified.

Table 14. Embedded internal reference voltage calibration values

Calibration value name

Description

Memory address

VREFINT_CAL

Raw data acquired at

temperature of 30 °C ±5 °C,

VDDA= 3 V ±10 mV

0x1FF8 0078-0x1FF8 0079

Table 15. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT out(1) Internal reference voltage

– 40 °C < TJ < +85 °C 1.202 1.224 1.242

IREFINT

Internal reference current

consumption

1.4

2.3

µA

TVREFINT

Internal reference startup time

VVREF_MEAS

VDDA voltage during VREFINT factory

measure

2.99

3.01

AVREF_MEAS

Accuracy of factory-measured VREF

value (2)

Including uncertainties

due to ADC and VDDA

values

±5

TCoeff(3)

Temperature coefficient

–40 °C < TJ < +105 °C

100

ppm/°C

ACoeff(3)

Long-term stability

1000 hours, T= 25 °C

1000

ppm

VDDCoeff(3)(4)

Voltage coefficient

3.0 V < VDDA < 3.6 V

2000

ppm/V

TS_vrefint(3)

ADC sampling time when reading the

internal reference voltage

-4

µs

TADC_BUF(3)

Startup time of reference voltage

buffer for ADC

µs

IBUF_ADC(3)

Consumption of reference voltage

buffer for ADC

13.5

µA

IVREF_OUT(3)

VREF_OUT output current(5)

µA

CVREF_OUT(3) VREF_OUT output load

ILPBUF(3)

Consumption of reference voltage

buffer for VREF_OUT and COMP

730

1200

VREFINT_DIV1(3) 1/4 reference voltage

% VREFINT

VREFINT_DIV2(3) 1/2 reference voltage

VREFINT_DIV3(3) 3/4 reference voltage

1. Guaranteed by test in production.

2. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes.

3. Guaranteed by characterization results.

4. Shortest sampling time can be determined in the application by multiple interactions.

5. To guarantee less than 1% VREF_OUT deviation.

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