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STM32L100RB bảng dữ liệu(PDF) 67 Page - STMicroelectronics

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STM32L100C6 STM32L100R8/RB
Electrical characteristics
90
6.3.9
Memory characteristics
The characteristics are given at TA = -40 to 85 °C unless otherwise specified.
RAM memory
Flash memory and data EEPROM
Table 33. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode).
STOP mode (or RESET)
1.8
-
-
V
Table 34. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design.
Unit
VDD
Operating voltage
Read / Write / Erase
-
1.8
-
3.6
V
tprog
Programming / erasing time for
byte / word / double word / half-
page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during whole
program/erase operation
TA = 25 °C, VDD = 3.6 V
-300
-
µA
Maximum current (peak) during
program/erase operation
-1.5
2.5
mA
Table 35. Flash memory, data EEPROM endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Guaranteed by characterization results.
Typ Max
NCYC(2)
Cycling (erase / write)
Program memory
TA = -40°C to
85 °C
1-
-
kcycles
Cycling (erase / write)
EEPROM data memory
100
-
-
tRET(2)
2. Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
1 kcycle at TA = 85 °C
TRET = +85 °C
10
-
-
years
Data retention (EEPROM data memory)
after 100 kcycles at TA = 85 °C
10
-
-



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