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STM32L100RB bảng dữ liệu(PDF) 67 Page - STMicroelectronics |
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STM32L100RB bảng dữ liệu(HTML) 67 Page - STMicroelectronics |
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67 / 103 page ![]() DocID024295 Rev 5 67/103 STM32L100C6 STM32L100R8/RB Electrical characteristics 90 6.3.9 Memory characteristics The characteristics are given at TA = -40 to 85 °C unless otherwise specified. RAM memory Flash memory and data EEPROM Table 33. RAM and hardware registers Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode(1) 1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware registers (only in Stop mode). STOP mode (or RESET) 1.8 - - V Table 34. Flash memory and data EEPROM characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design. Unit VDD Operating voltage Read / Write / Erase - 1.8 - 3.6 V tprog Programming / erasing time for byte / word / double word / half- page Erasing - 3.28 3.94 ms Programming - 3.28 3.94 IDD Average current during whole program/erase operation TA = 25 °C, VDD = 3.6 V -300 - µA Maximum current (peak) during program/erase operation -1.5 2.5 mA Table 35. Flash memory, data EEPROM endurance and data retention Symbol Parameter Conditions Value Unit Min(1) 1. Guaranteed by characterization results. Typ Max NCYC(2) Cycling (erase / write) Program memory TA = -40°C to 85 °C 1- - kcycles Cycling (erase / write) EEPROM data memory 100 - - tRET(2) 2. Characterization is done according to JEDEC JESD22-A117. Data retention (program memory) after 1 kcycle at TA = 85 °C TRET = +85 °C 10 - - years Data retention (EEPROM data memory) after 100 kcycles at TA = 85 °C 10 - - |
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