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TMS320C6711 bảng dữ liệu(PDF) 79 Page - Texas Instruments |
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TMS320C6711 bảng dữ liệu(HTML) 79 Page - Texas Instruments |
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79 / 129 page ![]() TMS320C6711, TMS320C6711B, TMS320C6711C, TMS320C6711D FLOATING-POINT DIGITAL SIGNAL PROCESSORS SPRS088L − FEBRUARY 1999 − REVISED MAY 2004 79 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 SYNCHRONOUS-BURST MEMORY TIMING timing requirements for synchronous-burst SRAM cycles† (see Figure 32) [C6711] NO C6711-100 C6711-150 UNIT NO. MIN MAX MIN MAX UNIT 6 tsu(EDV-EKOH) Setup time, read EDx valid before ECLKOUT high 6 2.5 ns 7 th(EKOH-EDV) Hold time, read EDx valid after ECLKOUT high 2.1‡ 2.1‡ ns timing requirements for synchronous-burst SRAM cycles† (see Figure 32) [C6711B] NO. C6711B-100 C6711BGFNA-100 C6711B-150 UNIT NO. MIN MAX MIN MAX UNIT 6 tsu(EDV-EKOH) Setup time, read EDx valid before ECLKOUT high 6 2.5 ns 7 th(EKOH-EDV) Hold time, read EDx valid after ECLKOUT high 2.5 2.5 ns timing requirements for synchronous-burst SRAM cycles† (see Figure 32) [C6711C/C6711D] NO. GDPA-167 −200 −250 (6711D) UNIT MIN MAX 6 tsu(EDV-EKOH) Setup time, read EDx valid before ECLKOUT high 1.5 ns 7 th(EKOH-EDV) Hold time, read EDx valid after ECLKOUT high 2.5 ns † The C6711/11B/11C/11D SBSRAM interface takes advantage of the internal burst counter in the SBSRAM. Accesses default to incrementing 4-word bursts, but random bursts and decrementing bursts are done by interrupting bursts in progress. All burst types can sustain continuous data flow. ‡ Make sure the external SBSRAM meets the timing specifications of the C6711 device. Delays or buffers may be needed to compensate for any timing differences. IBIS analysis should be used to correctly model the system interface. |
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