RPC56EL60L5BFSR datasheet(109/137 Pages) STMICROELECTRONICS

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RPC56EL60L5

Electrical characteristics

136

6T128KPPERASE

*(4)

128 KB block pre-program and erase time

800

2600

7500

7T256KPPERASE

*(4)

256 KB block pre-program and erase time

1400 5200

15000

Typical program and erase times represent the median performance and assume nominal supply values and operation at

25C. These values are characterized, but not tested.I

Initial Max program and erase times provide guidance for time-out limits used in the factory and apply for <100

program/erase cycles, nominal supply values and operation at 25C. These values are verified at production test.

Lifetime Max program and erase times apply across the voltage, temperature, and cycling range of product life. These

values are characterized, but not tested.

Program times are actual hardware programming times and do not include software overhead.

Table 26. Flash memory timing

Symbol

Parameter

Value

Unit

Min

Typ

Max

TRES

Time from clearing the MCR-ESUS or PSUS bit with EHV = 1

until DONE goes low

——

100

TDONE

Time from 0 to 1 transition on the MCR-EHV bit initiating a

program/erase until the MCR-DONE bit is cleared

——

TPSRT

Time between program suspend resume and the next program

suspend request.(1)

100

—

TESRT

Time between erase suspend resume and the next erase

suspend request.(2)

Repeated suspends at a high frequency may result in the operation timing out, and the flash module will respond by

completing the operation with a fail code (MCR[PEG] = 0), or the operation not able to finish (MCR[DONE] = 1 during

Program operation). The minimum time between suspends to ensure this does not occur is TPSRT.

If Erase suspend rate is less than TESRT, an increase of slope voltage ramp occurs during erase pulse. This improves erase

time but reduces cycling figure due to overstress

Table 25. Flash memory program and erase electrical specifications

No.

Symbol

Parameter

Typ

(1)

Initial

Max

(2)

Lifetime

Max(3)

Unit



Table 27. Flash memory module life

Symbol

Parameter

Value

Unit

Minimu

Typical

Maximu

1P/E

Number of program/erase cycles per block for 16 KB,

48 KB, and 64 KB blocks over the operating temperature

range(1)

100000

—

cycle

2P/E

Number of program/erase cycles per block for 128 KB

and 256 KB blocks over the operating temperature

range(1)

1000

100000

(2)

—

cycle

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