RPC56EL60L5BFSR datasheet(108/137 Pages) STMICROELECTRONICS

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Electrical characteristics

RPC56EL60L5

108/137

DocID026934 Rev 1

3.16

Flash memory electrical characteristics

GNE

T Gain error

—

–6

—

LSB

IS1WINJ

(single ADC channel)

C Max positive/negative injection

–3

—

IS1WWINJ

(double ADC channel)

C Max positive/negative injection

|Vref_ad0 - Vref_ad1| <

150mV

–3.6

—

3.6

SNR

T Signal-to-noise ratio

Vref = 3.3V

—

SNR

T Signal-to-noise ratio

Vref = 5.0V

—

THD

T Total harmonic distortion

—

-65

—

SINAD

T Signal-to-noise and distortion

—

ENOB

T Effective number of bits

—

10.5

—

bits

TUEIS1WINJ T

Total unadjusted error for IS1WINJ (single

ADC channels)

Without current injection

–6

—

LSB

With current injection

–8

—

LSB

TUEIS1WWI

P Total unadjusted error for IS1WWINJ

(double ADC channels)

Without current injection

–8

—

LSB

With current injection

–10

—

LSB

TJ = –40 to +150 °C, unless otherwise specified and analog input voltage from VAGND to VAREF.

AD_CK clock is always half of the ADC module input clock defined via the auxiliary clock divider for the ADC.

This is the maximum frequency that the analog portion of the ADC can attain. A sustained conversion at this frequency is

not possible.

During the sample time the input capacitance CS can be charged/discharged by the external source. The internal

resistance of the analog source must allow the capacitance to reach its final voltage level within tsample. After the end of the

sample time tsample, changes of the analog input voltage have no effect on the conversion result. Values for the sample

clock tsample depend on programming.

This parameter does not include the sample time Tsample, but only the time for determining the digital result.

See Figure 8.

For the 144-pin package

No missing codes

Table 24. ADC conversion characteristics (continued)

Symbol

Parameter

Conditions(1)

Min

Typ Max

Unit

Table 25. Flash memory program and erase electrical specifications

No.

Symbol

Parameter

Typ

(1)

Initial

Max

(2)

Lifetime

Max(3)

Unit

1TDWPROGRAM

*(4)

Double word (64 bits) program time(4)

—

500

µs

2TPPROGRAM

*(4)

Page(128 bits) program time(4)

160

500

µs

3T16KPPERASE

*(4)

16 KB block pre-program and erase time

250

1000

5000

4T48KPPERASE

*(4)

48 KB block pre-program and erase time

400

1500

5000

5T64KPPERASE

*(4)

64 KB block pre-program and erase time

450

1800

5000

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