RPC56EL60L5BFSR datasheet(92/137 Pages) STMICROELECTRONICS

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Electrical characteristics

RPC56EL60L5

92/137

DocID026934 Rev 1

The following bipolar transistors are supported:



BCP68 from ON Semiconductor



BCX68 from Infineon

The recommended external ballast transistor is the bipolar transistor BCP68 with the gain

range of 85 up to 375 (for IC=500mA, VCE=1V) provided by several suppliers. This includes

the gain variations BCP68-10, BCP68-16 and BCP68-25.The most important parameters for

the interoperability with the integrated voltage regulator are the DC current gain (hFE) and

the temperature coefficient of the gain (XTB). While the specified gain range of most BCP68

vendors is the same, there are slight variations in the temperature coefficient parameter.

RPC56EL60L5 Voltage regulator operation was simulated against the typical variation on

temperature coefficient and against the specified gain range to have a robust design.

Table 16. Characteristics

Symbol

Parameter

Value

Unit

hFE( )

DC current gain (Beta)

85 - 375

—

Maximum power dissipation @

TA=25°C

(1)

derating factor 12mW/degC

1.5

ICMaxDC

Maximum peak collector current

1.0

VCESAT

Collector-to-emitter saturation

voltage(Max)

600(2)

Adjust resistor at bipolar transistor collector for 3.3V to avoid VCE<VCESAT

VBE

Base-to-emitter voltage (Max)

1.0



Table 17. Voltage regulator electrical specifications

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Cex

External decoupling/

stability capacitor

Min, max values shall

be granted with respect

to tolerance, voltage,

temperature, and aging

variations.

—

µF

Combined ESR of

external capacitor

—

100



Number of pins for

external decoupling/

stability capacitor

—5

—

CV1V2

Total capacitance on

1.2 V pins

Ceramic capacitors,

taking into account

tolerance, aging,

voltage and

temperature variation

300

—

900

tSU

Start-up time after

main supply

stabilization

Cload = 10 µF × 4

—

2.5

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