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AN4192 bảng dữ liệu(PDF) 37 Page - STMicroelectronics |
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AN4192 bảng dữ liệu(HTML) 37 Page - STMicroelectronics |
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37 / 47 page ![]() AN4192 Low-side FET selection Doc ID 023820 Rev 1 37/47 3.5 RC snubber network settings In high frequency converters, designers must choose the right electric topology and device in order to minimize the switching noise. In particular, when the HS turns on, the LS body diode that was delivering the whole load current must be in the HOLD state. Due to the body diode reverse recovery process and stray inductances, an overshoot may appear on the phase node voltage, affecting the MOSFET reliability. Furthermore, the positive and negative spikes on the phase node waveforms are also dangerous for other electronic components surrounding the LS FET. The simplest way to reduce these switching oscillations is by connecting an RC snubber network across the LS FET. Theoretically, a simple capacitive snubber would be useful to smooth the switching noise; but, a series resistance is added to decrease the current amplitude during the capacitor discharging and to dissipate the energy at turn-off (when an overvoltage event occurs). Figure 46. LS FET with RC snubber network The right RSNUB and CSNUB selection depends on several factors: overshoot reduction, damping effect and energy losses in the snubber circuit: Typically, the snubber resistor is equal to the characteristic impedance of the freely oscillating circuit L-C: Equation 8 where Lstray includes the PCB and package inductances. Its value can be extrapolated by the phase node waveform, measuring the ringing oscillation fRING (Figure 47) and using (9): AM16489V1 E 1 2 --- V SNUB DD 2 ⋅⋅ = R SNUB L stray C oss --------------- = |
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