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AN4043 bảng dữ liệu(PDF) 45 Page - STMicroelectronics

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AN4043 bảng dữ liệu(HTML) 45 Page - STMicroelectronics

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AN4043
Power losses and dissipation
Doc ID 022726 Rev 2
45/60
and therefore, the conduction power losses of one device (IGBT and diode) are:
Equation 25
Of course, the total conduction losses per inverter are six times this value.
4.2
Switching power losses
The switching loss is the power consumption during the turn-on and turn-off transients. As
already shown in
Figure 26, it is given by the pulse of power dissipated during the turn-on
(ton) and turn-off (toff). Experimentally, it can be calculated by the time integral of product of
the collector current and collector-emitter voltage for the switching period. However, the
dynamic performance is strictly related to many parameters such as voltage, current and
temperature, so it is necessary to use the same assumptions of conduction power losses
(
Section 4.1: Conduction power losses) to simplify the calculations.
Under these conditions, the switching energy losses are given by:
Equation 26
Equation 27
where Êon and Êoff are the maximum values taken at Tjmax and Îc, θ stands for ωt and φ is
the phase angle between output voltage and current.
Finally, the switching power losses per device depend on the switching frequency (fsw) and
they are calculated as follows:
Equation 28
where EIGBT and EDiode are the total switching energy for the IGBT and the freewheeling
diode, respectively. Also in this case, the total switching losses per inverter are six times this
value.
Figure 28 shows the real turn-on and turn-off waveforms of the STGIPN3H60 under the
following conditions:
●
VPN = 300 V, IC = 0.5 A, Tj = 100 °C with inductive load on full bridge topology, taken on
the low-side IGBT.
The green plots represent instantaneous power as a result of IC (in red) and VCE (in yellow)
waveforms multiplication, during the switching transitions. The areas under these plots are
the switching energies computed by graphic integration thanks to the digital oscilloscope.
cond_Diode
cond_IGBT
cond
P
P
P
+
=
()φ
=
θ
-
θ
cos
Eˆ
)
(
E
on
on
()φ
=
θ
-
θ
cos
Eˆ
)
(
E
off
off
∫
φ
+
π
φ
+
π
π
⋅
+
=
θ
⋅
+
π
=
2
2
-
sw
Diode
IGBT
sw
Diode
IGBT
sw
f
)
E
E
(
d
f
)
E
E
(
2
1
P



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