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AN4043 bảng dữ liệu(PDF) 43 Page - STMicroelectronics

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AN4043 bảng dữ liệu(HTML) 43 Page - STMicroelectronics

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AN4043
Power losses and dissipation
Doc ID 022726 Rev 2
43/60
Both forward characteristics are temperature dependent, and so must be considered under
a specified temperature.
The linear approximations can be translated for IGBT in the following equation:
Equation 15
and, for freewheeling diode:
Equation 16
The conduction losses of IGBT and diode can be derived as the time integral of the product
of conduction current and voltage across the devices, as follows:
Equation 17
Equation 18
where T is the fundamental period.
The different utilization mode of the SLLIMM-nano, modulation technique, and working
conditions make the power losses very difficult to estimate, it is therefore necessary to fix
some starting points.
Figure 27.
IGBT and diode approximation of the output characteristics
V
TO
R
CE = ΔVCE / ΔIC
ΔI
C
ΔV
CE
V
TO
R
CE = ΔVCE / ΔIC
ΔI
C
ΔV
CE
V
FO
RAK = ΔVFM / ΔIFM
ΔI
FM
ΔV
FM
V
FO
RAK = ΔVFM / ΔIFM
ΔI
FM
ΔV
FM
AM09345v1
c
CE
TO
c
ce
i
R
V
)
(i
v
⋅
+
=
fm
AK
FO
fm
fm
i
R
V
)
(i
v
⋅
+
=
∫
∫
⎟
⎠
⎞
⎜
⎝
⎛
⋅
+
⋅
=
⋅
=
T
0
2
c
ce
c
TO
T
0
c
ce
cond_IGBT
dt
(t)
i
R
(t)
i
V
T
1
(t)dt
i
v
T
1
P
∫
∫
⎟
⎠
⎞
⎜
⎝
⎛
⋅
+
⋅
=
⋅
=
T
0
2
f
AK
f
FO
T
0
f
f
cond_Diode
dt
(t)
i
R
(t)
i
V
T
1
(t)dt
i
v
T
1
P



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