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AN4501 bảng dữ liệu(PDF) 12 Page - STMicroelectronics

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AN4501 bảng dữ liệu(HTML) 12 Page - STMicroelectronics

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Guideline for the selection of external components
AN4501
12/48
DocID026394 Rev 1
The additional input voltage ripple caused by the ESR is:
which is indeed negligible compared to 70 mV. The sum of both contributions is below the
maximum target of 100 mV (
ΔVIN,MAX).
Step 6: Selection of the switching MOSFET
The minimum required breakdown voltage is the same as the breakdown voltage of the
diode.
A 60 V, 16 m
Ω max @ 25°C is considered.
Estimation of the switching losses
The turn-on and turn-off times of the considered MOSFET with is estimated to 20 ns.
The maximum switching losses are given by:
Calculation of the max. RMS current
The MOSFET’s maximum RMS current is estimated by:
Iterative calculation of the total power losses and of the maximum junction
temperature
Considering at maximum ambient temperature of 85°C, a thermal coefficient of the RDSON
of 0.006 K-1, 20 ns of rise and fall times and a thermal resistance of 25 K/W, an iterative
calculation leads to a junction temperature of 125°C and a RDSON of 25.6 mΩ with a
precision of 0.2 m
Ω . Refer to Section 8.3.2 for the calculation details.
This confirms that the MOSFET can operate in the worst case conditions, without exceeding
the maximum rating of the junction temperature (175°C in general).
ESR
CI N
I
L,PP,MAX
×
210
3
–
2.36
×
⋅
4.8mV
==
P
M1,SW
V
OUT
I
LM AX
,
×
F
SW
×
2
------------------------------------------------------------
t
M1,SWON
t
M1,SWOFF
+
()
×
=
P
M1,SW
26
4.81
×
450 10
3
⋅
×
2
-------------------------------------------------------
20 10
9
–
⋅
20 10
9
–
⋅
+
()
×
1.13W
==
I
M1,RMS,MAX
I
OU T
1D
MAX
–
------------------------- D
MAX
1
1
12
------
I
L,PP,VINMIN
I
L,MAX
--------------------------------


 2
+



×
=
I
M1,RMS,MAX
1.0
1
0.791
–
------------------------ 0.791
1
1
12
------
1.55
4.81
-----------

 2
+


×
4.30A
==



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