VMV3 datasheet(162/212 Pages) MICROSEMI

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Military ProASIC3/EL DC and Switching Characteristics

2-148

Revision 3

Embedded FlashROM Characteristics

Timing Characteristics

Figure 2-56 • Timing Diagram

tSU

tHOLD

tSU

tHOLD

tSU

tHOLD

tCKQ2

CLK

Address

Data

Table 2-216 • Embedded FlashROM Access Time

Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.14 V for A3PE600L and

A3PE3000L

Parameter

Description

–1

Std.

Units

tSU

Address Setup Time

0.74

0.87

tHOLD

Address Hold Time

0.00

tCK2Q

Clock to Out

16.18

19.02

FMAX

Maximum Clock Frequency

MHz

Note:

For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating

values.

Table 2-217 • Embedded FlashROM Access Time

Military-Case Conditions: TJ = 125°C, VCC = 1.425 V for A3PE600L and A3PE3000L

Parameter

Description

–1

Std.

Units

tSU

Address Setup Time

0.58

0.68

tHOLD

Address Hold Time

0.00

tCK2Q

Clock to Out

12.77

15.01

FMAX

Maximum Clock Frequency

MHz

Note:

For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating

values.

Table 2-218 • Embedded FlashROM Access Time

Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.425 V for A3P250 and

A3P1000

Parameter

Description

–1

Std.

Units

tSU

Address Setup Time

0.64

0.75

tHOLD

Address Hold Time

0.00

tCK2Q

Clock to Out

19.54

22.97

FMAX

Maximum Clock Frequency

MHz

Note:

For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-8 for derating

values.

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