VMV3 datasheet(52/212 Pages) MICROSEMI

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Military ProASIC3/EL DC and Switching Characteristics

2-38

Revision 3

For example, at 110°C, the short current condition would have to be sustained for more than three

months to cause a reliability concern. The I/O design does not contain any short circuit protection, but

such protection would only be needed in extremely prolonged stress conditions.

Table 2-43 • Duration of Short Circuit Event before Failure

Temperature

Time before Failure

–50ºC

> 20 years

–40°C

> 20 years

0°C

> 20 years

25°C

> 20 years

70°C

5 years

85°C

2 years

100°C

6 months

110°C

3 months

125°C

1 month

Table 2-44 • I/O Input Rise Time, Fall Time, and Related I/O Reliability

Input Buffer

Input Rise/Fall Time (min.)

Input Rise/Fall Time (max.)

Reliability

LVTTL/LVCMOS

No requirement

10 ns *

20 years (110°C)

LVDS/B-LVDS/

M-LVDS/LVPECL

No requirement

10 ns *

10 years (100°C)

Note:

*The maximum input rise/fall time is related to the noise induced in the input buffer trace. If the noise is low, the rise

time and fall time of input buffers can be increased beyond the maximum value. The longer the rise/fall times, the more

susceptible the input signal is to the board noise. Microsemi recommends signal integrity evaluation/characterization

of the system to ensure that there is no excessive noise coupling into input signals.

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