7643 datasheet(88/424 Pages) RENESAS

88 / 424 page

Rev.2.00

Aug 28, 2006

page 71 of 103

REJ09B0133-0200

OVERVIEW

FLASH MEMORY MODE

7643 Group

Table 9 Summary of M37643F8 (flash memory version)

FLASH MEMORY MODE

The M37643F8FP/HP (flash memory version) has an internal new

DINOR (DIvided bit line NOR) flash memory that can be rewritten

with a single power source when VCC is 5 V, and 2 power sources

when VPP is 5 V and VCC is 3.3 V in the CPU rewrite and standard

serial I/O modes.

For this flash memory, three flash memory modes are available in

which to read, program, and erase: the parallel I/O and standard

serial I/O modes in which the flash memory can be manipulated

using a programmer and the CPU rewrite mode in which the flash

memory can be manipulated by the Central Processing Unit

(CPU).

Summary

Table 9 lists the summary of the M37643F8 (flash memory ver-

sion).

This flash memory version has some blocks on the flash memory

as shown in Figure 71 and each block can be erased. The flash

memory is divided into User ROM area and Boot ROM area.

In addition to the ordinary User ROM area to store the MCU op-

eration control program, the flash memory has a Boot ROM area

that is used to store a program to control rewriting in CPU rewrite

and standard serial I/O modes. This Boot ROM area has had a

standard serial I/O mode control program stored in it when

shipped from the factory. However, the user can write a rewrite

control program in this area that suits the user’s application sys-

tem. This Boot ROM area can be rewritten in only parallel I/O

mode.

Item

Power source voltage (For Program/Erase)

VPP voltage (For Program/Erase)

Flash memory mode

Erase block division

User ROM area

Boot ROM area

Program method

Erase method

Program/Erase control method

Number of commands

Number of program/Erase times

ROM code protection

Specifications

Vcc = 3.00 – 3.60 V, 4.50 – 5.25 V (f(XIN) = 24 MHz,

φ = 6 MHz) (Note 1)

VPP = 4.50 – 5.25 V

3 modes; Flash memory can be manipulated as follows:

(1) CPU rewrite mode: Manipulated by the Central Processing Unit (CPU)

(2) Parallel I/O mode: Manipulated using an external programmer (Note 2)

(3) Standard serial I/O mode: Manipulated using an external programmer (Note 2).

See Figure 71.

1 block (4 Kbytes) (Note 3)

Byte program

Batch erasing/Block erasing

Program/Erase control by software command

6 commands

100 times

Available in parallel I/O mode and standard serial I/O mode

Notes 1: After programming/erasing at Vcc = 3.0 to 3.6 V, the MCU can operate only at Vcc = 3.0 to 3.6 V.

After programming/erasing at Vcc = 4.5 to 5.25 V or programming/erasing with the exclusive external equipment flash programmer, the MCU can

operate at both Vcc = 3.0 to 3.6 V and 4.15 to 5.25 V.

2: In the parallel I/O mode or the standard serial I/O mode, use the exclusive external equipment flash programmer which supports the 7643 Group

(flash memory version).

3: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be

rewritten in only parallel I/O mode.

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