STM32WB09XE datasheet(52/73 Pages) STMICROELECTRONICS

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Table 38. RSTN pin characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit.

VIL(RSTN)

RSTN input low level voltage

0.3 x VDD

VIH(RSTN)

RSTN input high level voltage

0.7 x VDD

Vhys(RSTN)

RSTN Schmitt trigger voltage hysteresis

200

RPU

Weak pull-up equivalent resistor

VIN=GND

kΩ

Figure 13. Recommended RSTN pin protection

1. The external reset circuit protects the device against parasitic resets.

2. The user must ensure that the level on the RSTN pin can go below the VIL(RSTN) max. level specified in the

table, otherwise the reset is not taken into account by the device.

3. The external capacitor on RSTN must be placed as close as possible to the device.

6.3.18

ADC characteristics

Table 39. ADC characteristics (HSI must be set to PLL mode)

Symbol

Parameter

Test conditions

Min. Typ. Max.

Units

Ch_diff_num

Number of channels for

differential mode

VFQFPN32, WLCSP36

Ch_se_num

Number of channels for

single ended mode

VFQFPN32, WLCSP36

IBATADCBIAS

ADC biasing consumption at

battery

Biasing blocks turned on

145

µA

IBATADCACTIVE

ADC active consumption at

battery

ADC activated in differential mode

185

µA

VDDA

Analog supply voltage

1.2

1.32

RAIN

Input impedance

In DC

250

kΩ

Rin

Internal access resistance

VBOOST is enabled for VBAT < 2.7 V

550

Ω

Cin

Input sampling capacitor

Sampling period

Default configuration

µs

Tsw

Sampling time

Default configuration

125

Output data rate

200

k samples/s

STM32WB09xE

Electrical characteristics

DS14210 - Rev 6

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