STM32WB09XE datasheet(48/73 Pages) STMICROELECTRONICS

48 / 73 page

Symbol

Parameter

Conditions

Typ.

Unit

25 °C

85 °C

105 °C

IDD(Deepstop)

Supply current in Deepstop(2)

Clock source LSE

1023

5547

12929

Clock source LSE

RTC ON

1090

5682

13007

Clock source LSE

IWDG ON

1043

5599

13003

Clock source LSE.

LPUART ON

1128

5682

13035

Clock source LSE

RTC, LPUART and IWDG ON

1212

5816

13160

IDD(Shutdown)

Supply current in Shutdown

SMPS ON

279

871

IDD(RST)

Current under reset condition

956

1073

1160

µA

1. The CPU executes a "while(1)" loop

2. The current consumption in Deepstop is measured considering the entire SRAM retained.

3. LPUART not functional in deepstop mode with LSI (only LSE)

6.3.8

Wakeup time from low-power modes

The wakeup times reported are the latency between the event and the execution of the instruction. The device

goes to low-power mode after WFI (wait for interrupt) instructions.

Table 27. Low-power mode wakeup timing

Symbol

Parameter

Conditions

Typ. Unit

TWUDEEPSTOP Wakeup time from Deepstop mode to Run mode Wakeup from GPIO VDD = 3.3 V flash memory 170

µs

6.3.9

High speed crystal requirements

The high speed external oscillator must be supplied with an external 32 MHz crystal that is specified for a 6 to 8

pF loading capacitor. The STM32WB09 includes internal programmable capacitances that can be used to tune

the crystal frequency in order to compensate the PCB parasitic one. These internal load capacitors are made by a

fixed one, in parallel with a 6-bit binary weighted capacitor bank. Thanks to low CL step size (LSB is typically 0.07

pF), very fine crystal tuning is possible. With a typical XTAL sensitivity of -14 ppm/pF, it is possible to trim a 32

MHz crystal, with a resolution of 1 ppm.

The requirements for the external 32 MHz crystal are reported in the table below.

Table 28. HSE crystal requirements

Symbol

Parameter

Conditions

Min. Typ. Max. Unit

fNOM

Oscillator frequency

MHz

fTOL

Frequency tolerance

Includes initial accuracy, stability over temperature,

aging and frequency pulling due to incorrect load

capacitance

±50

ppm

ESR

Equivalent series resistance

100

Ω

Drive level

100

µW

HSE crystal load capacitance

27 °C, GMCONF = 3

5 (1)

7(2) 9.2(3)

CLstep

HSE crystal load capacitance LSB

value

27 °C, GMCONF = 3

XOTUNE code between 32 and 33

0.07

1. XOTUNE programed at minimum code = 0

STM32WB09xE

Electrical characteristics

DS14210 - Rev 6

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