DCM340C01

2025-03-18

Rev.1.2

6

© 2024-2025

Toshiba Electronic Devices & Storage Corporation

9. Absolute Maximum Ratings (Note)

Table 9.1 Absolute Maximum Ratings (Note)

(Ta = 25°C unless otherwise specified)

Characteristics

Condition

Symbol

Rating

Unit

Junction temperature

—

TJ

-40 to 150

°C

Storage temperature

range

—

Tstg

-65 to 150

°C

Operation temperature

range

—

Topr

-40 to 125

°C

Soldering temperature

10s

Tsol

260

°C

Supply voltage (DC)

—

VDD1,VDD2

-0.5 to 6.0

V

VI(1 to 4)

-0.5 to VDDX + 0.5

(Note 1)

V

VO(1 to 4)

0.5 to VDDX + 0.5

(Note 1)

V

Output Current

—

IO

±15

mA

Isolation voltage

1min

BVS

5000

Vrms

Output current

VDD1 = VDD2 = 5.5 V,

Tj = 150 °C, Ta = 25 °C

IS1

284

mA

VDD1 = VDD2 = 3.6 V,

Tj = 150 °C, Ta = 25 °C

IS2

434

mA

Power dissipation

Tj = 150 °C, Ta = 25 °C

Pd Max

1562

mW

Note: The absolute maximum ratings of a semiconductor device are a set of specified parameter

values, which must not be exceeded during operation, even for an instant.

If any of these rating would be exceeded during operation, the device electrical

characteristics may be irreparably altered, and the reliability and lifetime of the device can

no longer be guaranteed. Moreover, these operations with exceeded ratings may cause

break down, damage, and/or degradation to any other equipment. Applications using the

device should be designed such that each maximum rating will never be exceeded in any

operating conditions.

Before using, creating, and/or producing designs, refer to and comply with the precautions

and conditions set forth in this document.

Note 1: Maximum voltage must not exceed 6V.