ADuM1253

Ultra-Low-Power, I2C Isolator with

Unidirectional SCL, Extended VDD,

Idle-Bus Hot-Swap, and Low VOL

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Analog Devices | 4

(VDD1 - VGND1 = +1.71V to +5.5V, VDD2 - VGND2 = +1.71V to +5.5V, CL = 20pF, TA = -40°C to +125°C, unless otherwise noted (Note

1, Note 2). Typical values are at VDD1 - VGND1 = 3.3V, VDD2 - VGND2 = 3.3V, TA = +25°C, unless otherwise noted.)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Input Low Voltage,

SDA1/SCL1

VIL1

Relative to GND1

0.47

0.51

0.56

V

Input Hysteresis, Side 1

VHYS1

VIH1 - VIL1

(Note 5)

50

mV

Output Low Voltage,

SDA1

VOL1

Relative to GND1

I = 0.1mA - 5mA

sink

0.59

0.64

0.69

V

Low-level Output

Voltage to High-Level

Input Voltage Threshold

Difference, SDA1

ΔVO/IT

SDA1, VOL - VIH

(Note 4)

45

mV

Input High Voltage,

SDA2

VIH2

SDA2 to GND2

0.52 x

VDD2

0.45 x

VDD2

V

Input Low Voltage,

SDA2

VIL2

SDA2 to GND2

0.38 x

VDD2

0.3 x

VDD2

V

Input Hysteresis, Side 2

VHYS2

VIH2 - VIL2

0.07 x

VDD2

V

Output Low Voltage,

Side 2

VOL2

SDA2/SCL2 to

GND2

I = 50mA sink

0.4

V

Static Output Loading

ISDA1

Side 1

0.1

5

mA

ISDA2/SCL2

Side 2

0.1

50

Leakage Current

IL

Device unpowered

SDA1/SCL1 =

5.5V, VDD1 = 0V

-10

+10

µA

SDA2/SCL2 =

5.5V, VDD2 = 0V

-10

+10

Device powered

SDA1 = SCL1 =

VDD1 = 5.5V

-10

+10

Device powered

and not in

precharge

SDA2 = SCL2 =

VDD2 = 5.5V

-10

+10

Input Capacitance

CIN

f = 1MHz

(Note 5)

5

pF

ESD Protection (Note 5)

ESD

Human Body Model

VDD1 to same side

pins, VDD2 to same

side pins

±8

kV

SDA1/SCL1 to

GND1

±17

SDA2/SCL2 to

GND2

±17

IEC 61000-4-2

contact discharge

SDA1/SCL1 to

GND1 unpowered

±8

SDA2/SCL2 to

GND2 unpowered

±8

IEC 61000-4-2

contact discharge

(GND2 to GND1)

8 Wide SOIC

±5

8 Narrow SOIC

±5

8 MSOP

±4