UPD75P3018A datasheet(17/66 Pages) RENESAS

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µPD75P3018A

Data Sheet U11917EJ2V1DS

5. DIFFERENCES BETWEEN

µPD75P3018A AND µPD753012A, 753016A, AND 753017A

The

µPD75P3018A replaces the internal mask ROM in the µPD753012A, 753016A, and 753017A with a one-time PROM

and features expanded ROM capacity. The

µPD75P3018A’s Mk I mode supports the Mk I mode in the µPD753012A,

753016A, and 753017A and the

µPD75P3018A’s Mk II mode supports the Mk II mode in the µPD753012A, 753016A, and

753017A.

Table 5-1 lists differences among the

µPD75P3018A and the µPD753012A, 753016A, and 753017A. Be sure to check

the differences among these products before using them with PROMs for debugging or prototype testing of application

systems or, later, when using them with a mask ROM for full-scale production.

For the CPU functions and internal hardwares, refer to

µPD753017 User's Manual (U11282E).

Table 5-1. Differences between

µPD75P3018A and µPD753012A, 753016A, and 753017A

Item

µPD753012A

µPD753016A

µPD753017A

µPD75P3018A

Program counter

14 bits

15 bits

Program memory (bytes)

Mask ROM

One-time PROM

During

12288

16384

Mk I mode

During

12288

16384

24576

32768

Mk II mode

Data memory (

× 4 bits)

1024

Mask options

Pull-up resistor for

Yes (Can be specified whether to incorporate or not)

No (Cannot incorporate)

PORT4 and PORT5

LCD split resistor

Feedback resistor

Yes (Can be specified whether to use or not)

No (used)

for subsystem clock

Wait time

Yes (Can be specified either 217/fX or 215/fX)Note

No (Fixed at 215/fX)Note

during RESET

Pin configuration

Pin Nos. 29 to 32

P40 to P43

P40/D0 to P43/D3

Pin Nos. 34 to 37

P50 to P53

P50/D4 to P53/D7

Pin No. 50

P30/LCDCL

P30/LCDCL/MD0

Pin No. 51

P31/SYNC

P31/SYNC/MD1

Pin Nos. 52 and 53

P32, P33

P32/MD2, P33/MD3

Pin No. 57

VPP

Other

Noise resistance and noise radiation may differ due to the different circuit sizes and mask

layouts.

Note

For 217/fX, during 6.0 MHz operation is 21.8 ms, and during 4.19 MHz operation is 31.3 ms.

For 215/fX, during 6.0 MHz operation is 5.46 ms, and during 4.19 MHz operation is 7.81 ms.

Caution

Noise resistance and noise radiation are different in PROM and mask ROMs. In transferring to mask

ROM version from the PROM version in a process between prototype development and full production,

be sure to fully evaluate the mask ROM version’s CS (not ES).

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